Jan Evans-Freeman

Pro-Vice-Chancellor EngineeringJan Evans-Freeman

Amorangi Pūkaha
John Britten Rm 111
Internal Phone: 94347

Qualifications & Memberships

Research Interests

Studies of semiconducting materials for next generation high speed silicon transistors, solar cells, power devices, and light emitting diodes.

Recent Publications

  • Elhaji A., Evans-Freeman JH., El-Nahass MM., Kappers MJ. and Humphries CJ. (2014) Electrical characterization and DLTS analysis of a gold/n-type gallium nitride Schottky diode. Materials Science in Semiconductor Processing 17: 94-99. http://dx.doi.org/10.1016/j.mssp.2013.08.006.
  • Elsherif OS., Vernon-Parry KD., Dharmadasa IM., Evans-Freeman JH., Airey RJ., Kappers MJ. and Humphreys CJ. (2012) Characterization of defects in Mg doped GaN epitaxial layers using conductance measurements. Thin Solid Films 520(31): 3064-3070. http://dx.doi.org/10.1016/j.tsf.2011.11.020.
  • Elsherif OS., Vernon-Parry KD., Evans-Freeman JH. and May PW. (2012) Effect of doping on electronic states in in B-doped CVD diamond films. Semiconductor Science and Technology 27(6): 65019. http://dx.doi.org/10.1088/0268-1242/27/6/065019.
  • Elsherif OS., Vernon-Parry KD., Evans-Freeman JH. and May PW. (2012) Electrical characterisation of defects in polycrystalline B-doped diamond films. In Materials Science Forum 717-720: 1315-1318. http://dx.doi.org/10.4028/www.scientific.net/MSF.717-720.1315.
  • Elsherif OS., Vernon-Parry KD., Evans-Freeman JH., Airey RJ., Kappers M. and Humphreys CJ. (2012) Characterisation of defects in p-GaN by Admittance Spectroscopy. Nelson, New Zealand: 26th International Conference on Defects in Semiconductors (ICDS 26), 17-22 Jul 2011. In Physica B: Condensed Matter 407(15): 2960-2963. http://dx.doi.org/10.1016/j.physb.2011.08.077.

Professor Jan Evans-Freeman is responsible for strategic, academic and operational  leadership of the College of Engineering | Te Rāngai Pūkaha.