Martin Allen

Associate ProfessorMartin Allen

Intermediate Year Coordinator
Link Rm 303
Internal Phone: 95634

Qualifications

Research Interests

Physical properties and device applications of metal oxide semiconductors (in particular the semiconducting oxides of zinc, magnesium, tin, indium, gallium, and their alloys). Transparent thin film transistors for high speed pixel switching in optical displays. UVB photodetectors for monitoring personal UV exposures for the prevention of skin cancer and vitamin D deficiency.

Recent Publications

  • Brillson L., Cox J., Gao H., Foster G., Ruane W., Jarjour A., Allen M., Look D., von Wenckstern H. and Grundmann M. (2019) Native point defect measurement and manipulation in ZnO nanostructures. Materials 12(14) http://dx.doi.org/10.3390/ma12142242.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Direct comparison of plain and oxidized metal Schottky contacts on β-Ga 2 O 3. Applied Physics Letters 114(3) http://dx.doi.org/10.1063/1.5079423.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) High-Temperature $\beta$ -Ga2O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts. IEEE Electron Device Letters 40(10): 1587-1590. http://dx.doi.org/10.1109/led.2019.2937494.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Oxidized Metal Schottky Contacts on (010) β-Ga 2 O 3. IEEE Electron Device Letters 40(2): 337-340. http://dx.doi.org/10.1109/LED.2019.2891304.
  • Hou C., Makin RA., York KR., Durbin SM., Scott JI., Gazoni RM., Reeves RJ. and Allen MW. (2019) High-temperature (350 °c) oxidized iridium Schottky contacts on β -Ga2O3. Applied Physics Letters 114(23) http://dx.doi.org/10.1063/1.5099126.