Associate ProfessorMartin Allen
Intermediate Year Coordinator
Link Rm 303
Phone: +6433695634
Internal Phone: 95634
Qualifications
Research Interests
Physical properties and device applications of metal oxide semiconductors (in particular the semiconducting oxides of zinc, magnesium, tin, indium, gallium, and their alloys). Transparent thin film transistors for high speed pixel switching in optical displays. UVB photodetectors for monitoring personal UV exposures for the prevention of skin cancer and vitamin D deficiency.
Recent Publications
- Blesić SM., du Preez DJ., Stratimirović DI., Ajtić JV., Ramotsehoa MC., Allen MW. and Wright CY. (2020) Characterization of personal solar ultraviolet radiation exposure using detrended fluctuation analysis. Environmental Research 182 http://dx.doi.org/10.1016/j.envres.2019.108976.
- Brillson L., Cox J., Gao H., Foster G., Ruane W., Jarjour A., Allen M., Look D., von Wenckstern H. and Grundmann M. (2019) Native point defect measurement and manipulation in ZnO nanostructures. Materials 12(14) http://dx.doi.org/10.3390/ma12142242.
- Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Direct comparison of plain and oxidized metal Schottky contacts on β-Ga
2 O3 . Applied Physics Letters 114(3) http://dx.doi.org/10.1063/1.5079423. - Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) High-Temperature β-Ga
2 O3 Schottky Diodes and UVC Photodetectors Using RuOx Contacts. IEEE Electron Device Letters 40(10): 1587-1590. http://dx.doi.org/10.1109/LED.2019.2937494. - Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Oxidized Metal Schottky Contacts on (010) β-Ga
2 O3 . IEEE Electron Device Letters 40(2): 337-340. http://dx.doi.org/10.1109/LED.2019.2891304.