Martin Allen

Associate ProfessorMartin Allen

Intermediate Year Coordinator
Link Rm 303
Internal Phone: 95634

Qualifications

Research Interests

Physical properties and device applications of metal oxide semiconductors (in particular the semiconducting oxides of zinc, magnesium, tin, indium, gallium, and their alloys). Transparent thin film transistors for high speed pixel switching in optical displays. UVB photodetectors for monitoring personal UV exposures for the prevention of skin cancer and vitamin D deficiency.

Recent Publications

  • Blesić SM., du Preez DJ., Stratimirović DI., Ajtić JV., Ramotsehoa MC., Allen MW. and Wright CY. (2020) Characterization of personal solar ultraviolet radiation exposure using detrended fluctuation analysis. Environmental Research 182 http://dx.doi.org/10.1016/j.envres.2019.108976.
  • Brillson L., Cox J., Gao H., Foster G., Ruane W., Jarjour A., Allen M., Look D., von Wenckstern H. and Grundmann M. (2019) Native point defect measurement and manipulation in ZnO nanostructures. Materials 12(14) http://dx.doi.org/10.3390/ma12142242.
  • Dang GT., Allen MW., Furuta M. and Kawaharamura T. (2019) Electronic devices fabricated on mist-CVD-grown oxide semiconductors and their applications. Japanese Journal of Applied Physics 58(9) http://dx.doi.org/10.7567/1347-4065/ab2195.
  • Herklotz F., Chaplygin I., Lavrov EV., Neiman A., Reeves RJ. and Allen MW. (2019) Bistability of a hydrogen defect with a vibrational mode at 3326cm-1 in ZnO. Physical Review B 99(11) http://dx.doi.org/10.1103/PhysRevB.99.115203.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2019) Direct comparison of plain and oxidized metal Schottky contacts on β-Ga 2 O 3. Applied Physics Letters 114(3) http://dx.doi.org/10.1063/1.5079423.