Martin Allen

Associate ProfessorMartin Allen

Intermediate Year Coordinator
Electrical Link Rm 303
Internal Phone: 95634


Research Interests

Physical properties and device applications of metal oxide semiconductors (in particular the semiconducting oxides of zinc, magnesium, tin, indium, gallium, and their alloys). Transparent thin film transistors for high speed pixel switching in optical displays. UVB photodetectors for monitoring personal UV exposures for the prevention of skin cancer and vitamin D deficiency.

Recent Publications

  • Altieri L., Miller KA., Huh J., Peng DH., Unger JB., Richardson JL., Allen MW. and Cockburn M. (2018) Prevalence of sun protection behaviors in Hispanic youth residing in a high ultraviolet light environment. Pediatric Dermatology 35(1): e52-e54.
  • Dang GT., Kawaharamura T., Furuta M. and Allen MW. (2017) Zinc tin oxide metal semiconductor field effect transistors and their improvement under negative bias (illumination) temperature stress. Applied Physics Letters 110(7)
  • Foster GM., Gao H., Mackessy G., Hyland AM., Allen MW., Wang B., Look DC. and Brillson LJ. (2017) Impact of defect distribution on IrOx/ZnO interface doping and Schottky barriers. Applied Physics Letters 111(10)
  • Heinhold R., Neiman A., Kennedy JV., Markwitz A., Reeves RJ. and Allen MW. (2017) Hydrogen-related excitons and their excited-state transitions in ZnO. Physical Review B 95(5)
  • Hyland AM., Makin RA., Durbin SM. and Allen MW. (2017) Giant improvement in the rectifying performance of oxidized Schottky contacts to ZnO. Journal of Applied Physics 121(2) 024501