Roger Reeves

ProfessorRoger Reeves

Beatrice Tinsley 421
Internal Phone: 95943


Research Interests

Semiconductor thin film growth and characterisation particularly transparent conducting oxides that have applications in new electronics. The growth techniques used include molecular beam epitaxy, pulsed laser deposition and Mist-chemical vapour deposition. Optical characterisation is done with low temperature photoluminescence and photoconductivity.

Recent Publications

  • Cheung R., Reeves RJ. and Brown SA. (2000) Process-induced defects and optical memory in gallium nitride. In Beke DL; Fisher DJ; Murch GE (Ed.), Defects and Diffusion in Ceramics, Vol. 186-187: Defect and Diffusion Forum: 61-70. Switzerland: Trans Tech Publications.
  • Dela Cruz Z., Hou C., Martinez-Gazoni RF., Reeves RJ. and Allen MW. (2022) Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001), (2 ¯ 01), and (010) β -Ga2O3. Applied Physics Letters 120(8)
  • Hayali A., Reeves RJ. and Alkaisi MM. (2022) Influence of FK209 Cobalt Doped Electron Transport Layer in Cesium Based Perovskite Solar Cells. Applied Sciences (Switzerland) 12(18)
  • Hayali A., Reeves RJ. and Alkaisi MM. (2022) Wavelength Selective Solar Cells Using Triple Cation Perovskite. Nanomaterials 12(19)
  • Carroll LR., Martinez-Gazoni RF., Gaston N., Reeves RJ., Downard AJ. and Allen MW. (2021) Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting. ACS Applied Electronic Materials 3(12): 5608-5620.