Roger Reeves

ProfessorRoger Reeves

100 level supervisor
Beatrice Tinsley 421
Internal Phone: 95943


Research Interests

Semiconductor thin film growth and characterisation particularly transparent conducting oxides that have applications in new electronics. The growth techniques used include molecular beam epitaxy, pulsed laser deposition and Mist-chemical vapour deposition. Optical characterisation is done with low temperature photoluminescence and photoconductivity.

Recent Publications

  • Cheung R., Reeves RJ. and Brown SA. (2000) Process-induced defects and optical memory in gallium nitride. In Beke DL; Fisher DJ; Murch GE (Ed.), Defects and Diffusion in Ceramics, Vol. 186-187: Defect and Diffusion Forum: 61-70. Switzerland: Trans Tech Publications.
  • Dela Cruz Z., Hou C., Martinez-Gazoni RF., Reeves RJ. and Allen MW. (2022) Performance of in situ oxidized platinum/iridium alloy Schottky contacts on (001), (2 ¯ 01), and (010) β -Ga2O3. Applied Physics Letters 120(8)
  • Carroll LR., Martinez-Gazoni RF., Gaston N., Reeves RJ., Downard AJ. and Allen MW. (2021) Bidirectional Control of the Band Bending at the (2̅01) and (010) Surfaces of β-Ga2O3 Using Aryldiazonium Ion and Phosphonic Acid Grafting. ACS Applied Electronic Materials 3(12): 5608-5620.
  • Hou C., Gazoni RM., Reeves RJ. and Allen MW. (2021) Dramatic Improvement in the Rectifying Properties of Pd Schottky Contacts on β-Ga2O3During Their High-Temperature Operation. IEEE Transactions on Electron Devices 68(4): 1791-1797.
  • Martinez-Gazoni RF., Allen MW. and Reeves RJ. (2021) Persistent Photoconductivity in SnO2Thin Films Grown by Molecular Beam Epitaxy: The Dominant Roles of Water Vapor and Carrier Concentration. Journal of Physical Chemistry C 125(48): 26967-26977.