Roger Reeves

ProfessorRoger Reeves

100 level supervisor
Beatrice Tinsley 421
Internal Phone: 95943


Research Interests

Semiconductor thin film growth and characterisation particularly transparent conducting oxides that have applications in new electronics. The growth techniques used include molecular beam epitaxy, pulsed laser deposition and Mist-chemical vapour deposition. Optical characterisation is done with low temperature photoluminescence and photoconductivity.

Recent Publications

  • Cheung R., Reeves RJ. and Brown SA. (2000) Process-induced defects and optical memory in gallium nitride. In Beke DL; Fisher DJ; Murch GE (Ed.), Defects and Diffusion in Ceramics, Vol. 186-187: Defect and Diffusion Forum: 61-70. Switzerland: Trans Tech Publications.
  • Gazoni RM., Carroll L., Scott JI., Astley S., Evans DA., Downard AJ., Reeves RJ. and Allen MW. (2020) Relationship between the hydroxyl termination and band bending at (2¯ 01)β-G a2 O3 surfaces. Physical Review B 102(3)
  • Hou C., York KR., Makin RA., Durbin SM., Gazoni RM., Reeves RJ. and Allen MW. (2020) High temperature (500 °c) operating limits of oxidized platinum group metal (PtOx, IrOx, PdOx, RuOx) Schottky contacts on β-Ga2O3. Applied Physics Letters 117(20)
  • Makin RA., York K., Durbin SM. and Reeves RJ. (2020) Revisiting semiconductor band gaps through structural motifs: An Ising model perspective. Physical Review B 102(11)
  • Herklotz F., Chaplygin I., Lavrov EV., Neiman A., Reeves RJ. and Allen MW. (2019) Bistability of a hydrogen defect with a vibrational mode at 3326cm-1 in ZnO. Physical Review B 99(11)