Drawing at a Nanoscale
Date: Friday 29 May 2009
Time: 2:10 p.m.
Location: Lecture Theatre A309, Electrical and Computer Engineering Building
Contact: For further information regarding this event, please contact Irene Chang by sending email to email@example.com or by calling +64 3 364 2264
Audience: The general public
The Department of Electrical and Computer Engineering is hosting a seminar entitled "Drawing at a Nanoscale" by John Foulkes
In order to maintain Moore's law, the number of transistors per unit area needs to be increased exponentially. At the forefront of the drive to increase transistor density has been optical lithography, the mainstay patterning technique of semiconductors since the 1960's. From a resolution of 1.25um in 1979 to a resolution below 50nm today incredible advances have been made. However once again a limit is being reached where diffraction effects and the lack of suitable shorter wavelengths are requiring new techniques and ideas to be developed. In this talk I will briefly look at some developments in optical lithography, particularly in the near field, how Absorbance Modulation Optical Lithography (AMOL) proposes to improve on the current techniques and how my research improves our understanding of AMOL.
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